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| On-Region Characteristics. 15 -3.5V -3.0V -2.5V RDS(ON), Normalized Drain-Source On-Resistance VGS=-4.5V 3 On-Region Variation With Drain Current and Gate Voltage. VGS=-2.0V -ID, Drain Current(A) 12 9 2.5 2 -2.5V -3.0V -3.5V -4.5V -4.0V 12 15 6 -2.0V 3 1.5 1 0 0 0.5 1 1.5 2 2.5 0.5 0 3 6 9 -VGS, Drain-Source Voltage(V) -ID, Drain Current(A) On-Region Variation With Temperature. 1.5 On-Region Variation WithGate-to Source Voltage. 0.18 RDS(ON), Normalized Drain-Source On-Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 RDS(ON),On-Resistance(OHM) ID=-5A VGS=-4.5V ID=-2.5A 0.14 0.12 0.1 TA=125 0.08 0.06 TA=25 0.04 0.02 1.5 -25 0 25 50 75 100 125 150 2 2.5 3 3.5 4 4.5 5 TJ, Junction Temperature(C) -VSD, Gate To Source Voltage(V) Transfer Characteristics. 10 Body Diode Forward Voltage Variation With Source Current and Temperature. 10 -IS, Reverse Drain Current(A) VDS=-5.0V 8 TA=-55C 6 25C 1 0.1 VGS=0V TA=125 25 C -55 C -ID(A) 125C 4 0.01 0.001 0.0001 2 0 0 0.5 1 1.5 2 0 0.2 0.4 0.6 0.8 1 1.2 -VGS(Volts) -VSD, Body Diode Forward Voltage(V) Gate Charge Characteristics. 5 4 VGS, Gate-Source Voltage(V) Capacitance(pF) Capacitance Characteristics. 2000 f=1MHz ID=-5A VDS=-5.0V -10V 1600 Ciss VGS=0V 3 2 1 -15V 1200 800 Coss 400 Crss 0 0 3 6 9 12 15 18 0 0 5 10 15 20 Qg Gate Charge (nC) -VGS(Volts) Maxmum Safe Operating Area. 100 Sing Pulse Maximum Power Dissipation. 5 P(pk), Peak Transient Power(W) SINGLE PULSE R JA=156C/W TA=25C RDS(ON) LIMIT -ID,Drain Current(A) 10 100 s 1ms 10ms 100ms 4 3 1 10s DC 0.1 1s 2 VGS =-4.5V SINGLE PULSE R JA=156 C/W TA=25C 1 0.01 0.1 0 1 10 100 0.1 1 10 100 1000 -VGS,Drain-Source Voltage(V) t1,Time(SEC) Transisent Thermal Response Curve. r(t), Normalized Effective Transient Thermal Resistance 1 D=0.5 0.2 0.1 0.1 P(pk) R R JA(t) JA=156 = r(t) + R C/W 0.05 0.02 0.01 0.01 Single Pulse t1 t2 TJ-TA=P*R JA(t) Duty Cycle, D= t1/ t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 t1,Time(SEC) |
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